RFD8P06LESM
vs
RFD8P06LE
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERSIL CORP
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
8 A
|
8 A
|
Drain-source On Resistance-Max |
0.33 Ω
|
0.33 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
TO-251AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
IN-LINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
48 W
|
48 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
4
|
Case Connection |
|
DRAIN
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare RFD8P06LESM with alternatives
Compare RFD8P06LE with alternatives