RFD8P06LESM9A
vs
FX6ASJ-06
feature comparison
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
RENESAS ELECTRONICS CORP
|
Part Package Code |
TO-252AA
|
SC-63
|
Package Description |
TO-252AA VARIANT, 3 PIN
|
MP-3A, SC-63, 3 PIN
|
Pin Count |
4
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
8 A
|
6 A
|
Drain-source On Resistance-Max |
0.33 Ω
|
0.37 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
3
|
ECCN Code |
|
EAR99
|
Date Of Intro |
|
1999-01-01
|
Pulsed Drain Current-Max (IDM) |
|
24 A
|
|
|
|
Compare RFD8P06LESM9A with alternatives
Compare FX6ASJ-06 with alternatives