RFP2N10 vs IRF540N feature comparison

RFP2N10 Harris Semiconductor

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IRF540N Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 2 A 33 A
Drain-source On Resistance-Max 1.05 Ω 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 25 W 94 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 5 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 70 ns
Turn-on Time-Max (ton) 70 ns
Base Number Matches 2 42
Package Description TO-220AB, 3 PIN
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 185 mJ
Peak Reflow Temperature (Cel) 225
Time@Peak Reflow Temperature-Max (s) 30

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