RJK0328DPB-01#J0
vs
RJK0328DPB
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
RENESAS ELECTRONICS CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-G4
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
60 A
|
|
| Drain-source On Resistance-Max |
0.0029 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PSSO-G4
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
4
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
65 W
|
|
| Pulsed Drain Current-Max (IDM) |
240 A
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
No
|
| Manufacturer Package Code |
|
PTZZ0005DA
|
| Samacsys Manufacturer |
|
Renesas Electronics
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare RJK0328DPB-01#J0 with alternatives
Compare RJK0328DPB with alternatives