RJK0365DPA-02#J0B
vs
IPD135N03LGHF
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
WPAK(3F)
|
|
Package Description |
SMALL OUTLINE, R-PDSO-N5
|
GREEN, PLASTIC, TO-252, 3 PIN
|
Pin Count |
8
|
|
Manufacturer Package Code |
PWSN0008DC
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
5A002
|
EAR99
|
Samacsys Manufacturer |
Renesas Electronics
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.0127 Ω
|
0.0135 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-N5
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
210 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Additional Feature |
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
|
20 mJ
|
JEDEC-95 Code |
|
TO-252AA
|
Operating Temperature-Max |
|
175 °C
|
|
|
|
Compare RJK0365DPA-02#J0B with alternatives
Compare IPD135N03LGHF with alternatives