RN1101(TE85L) vs DTC143ESA feature comparison

RN1101(TE85L) Toshiba America Electronic Components

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DTC143ESA ROHM Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 20
JESD-30 Code R-PDSO-G3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 2 2
Rohs Code Yes
Samacsys Manufacturer ROHM Semiconductor
JESD-609 Code e1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.3 W
Terminal Finish TIN SILVER COPPER
VCEsat-Max 0.3 V

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