RN1101(TE85L) vs 934057178315 feature comparison

RN1101(TE85L) Toshiba America Electronic Components

Buy Now Datasheet

934057178315 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CHIP CARRIER, R-PBCC-N3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G3 R-PBCC-N3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING NO LEAD
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code SC-101
Case Connection COLLECTOR
JESD-609 Code e3
Operating Temperature-Max 150 °C
Terminal Finish TIN

Compare RN1101(TE85L) with alternatives

Compare 934057178315 with alternatives