RN1101(TE85L) vs DTC143ERLRA feature comparison

RN1101(TE85L) Toshiba America Electronic Components

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DTC143ERLRA onsemi

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G3 TO-226, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 15
JESD-30 Code R-PDSO-G3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED 235
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 1
Rohs Code No
Part Package Code TO-92
JEDEC-95 Code TO-92
JESD-609 Code e0
Power Dissipation-Max (Abs) 0.35 W
Terminal Finish TIN LEAD

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