RN1101(TE85L) vs DTC143ESA feature comparison

RN1101(TE85L) Toshiba America Electronic Components

Buy Now Datasheet

DTC143ESA Secos Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP SECOS CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 20
JESD-30 Code R-PDSO-G3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 3
HTS Code 8541.21.00.75
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.3 W
Power Dissipation-Max (Abs) 0.3 W

Compare RN1101(TE85L) with alternatives

Compare DTC143ESA with alternatives