RN1102FV vs KSR1005D74Z feature comparison

RN1102FV Toshiba America Electronic Components

Buy Now Datasheet

KSR1005D74Z Fairchild Semiconductor Corporation

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-F3 CYLINDRICAL, O-PBCY-T3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 0.47
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-F3 O-PBCY-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form FLAT THROUGH-HOLE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
JEDEC-95 Code TO-92

Compare RN1102FV with alternatives

Compare KSR1005D74Z with alternatives