RN1402(T5LSAN,F) vs RN1114FV feature comparison

RN1402(T5LSAN,F) Toshiba America Electronic Components

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RN1114FV Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50 50
JESD-30 Code R-PDSO-G3 R-PDSO-F3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W 0.15 W
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Pin Count 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RN1402(T5LSAN,F) with alternatives

Compare RN1114FV with alternatives