RN2203 vs MMUN2134LT3 feature comparison

RN2203 Toshiba America Electronic Components

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MMUN2134LT3 Motorola Mobility LLC

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP MOTOROLA INC
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 80
JESD-30 Code R-PSIP-T3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
Base Number Matches 1 3
HTS Code 8541.21.00.95
JEDEC-95 Code TO-236AB
Power Dissipation Ambient-Max 0.2 W
VCEsat-Max 0.25 V

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