RQ3E180AJTB
vs
BSF045N03MQ3G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROHM CO LTD
|
INFINEON TECHNOLOGIES AG
|
Package Description |
HSMT8, 8 PIN
|
CHIP CARRIER, R-MBCC-N2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
ROHM Semiconductor
|
|
Avalanche Energy Rating (Eas) |
24.6 mJ
|
30 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
18 A
|
18 A
|
Drain-source On Resistance-Max |
0.0058 Ω
|
0.0059 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-F5
|
R-MBCC-N2
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
72 A
|
252 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
NO LEAD
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Pin Count |
|
2
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
28 W
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare RQ3E180AJTB with alternatives
Compare BSF045N03MQ3G with alternatives