RS1G260MNTB
vs
BSC027N04LSGATMA1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Not Recommended
|
Ihs Manufacturer |
ROHM CO LTD
|
INFINEON TECHNOLOGIES AG
|
Package Description |
HSOP-8
|
SMALL OUTLINE, R-PDSO-F5
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
21 Weeks
|
16 Weeks, 5 Days
|
Samacsys Manufacturer |
ROHM Semiconductor
|
Infineon
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
26 A
|
24 A
|
Drain-source On Resistance-Max |
0.0044 Ω
|
0.0041 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-F5
|
R-PDSO-F8
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
3 W
|
|
Pulsed Drain Current-Max (IDM) |
104 A
|
400 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
Tin (Sn)
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Pin Count |
|
8
|
Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
|
115 mJ
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare RS1G260MNTB with alternatives
Compare BSC027N04LSGATMA1 with alternatives