RSS130N03FU6TB vs IRF7413TR feature comparison

RSS130N03FU6TB ROHM Semiconductor

Buy Now Datasheet

IRF7413TR Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ROHM CO LTD INFINEON TECHNOLOGIES AG
Package Description , SO-8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 13 A 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level 1
Number of Elements 1 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES YES
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 1 3
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 260 mJ
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.011 Ω
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 58 A
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare RSS130N03FU6TB with alternatives

Compare IRF7413TR with alternatives