RZ1214B35Y
vs
933783040114
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
,
|
FLANGE MOUNT, R-MDFM-F2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
3 A
|
3 A
|
| Configuration |
SINGLE
|
SINGLE
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
90 W
|
|
| Surface Mount |
NO
|
YES
|
| Base Number Matches |
4
|
1
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
WITH EMITTER BALLASTING RESISTORS
|
| Case Connection |
|
BASE
|
| Collector-Emitter Voltage-Max |
|
15 V
|
| Highest Frequency Band |
|
L BAND
|
| JESD-30 Code |
|
R-MDFM-F2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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