S2301
vs
MSC080SMA120B4
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ROHM CO LTD
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
UNCASED CHIP, X-XXUC-N
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
| Drain Current-Max (ID) |
40 A
|
37 A
|
| Drain-source On Resistance-Max |
0.111 Ω
|
0.1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
X-XXUC-N
|
R-PSFM-T4
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
UNSPECIFIED
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
90 A
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
| Terminal Position |
UNSPECIFIED
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
| Base Number Matches |
1
|
2
|
| HTS Code |
|
8541.29.00.95
|
| Factory Lead Time |
|
11 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
| Case Connection |
|
DRAIN
|
| JEDEC-95 Code |
|
TO-247
|
| Number of Terminals |
|
4
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
200 W
|
|
|
|
Compare S2301 with alternatives
Compare MSC080SMA120B4 with alternatives