SBC817-25LT1G
vs
TBC337-25
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GOOD-ARK ELECTRONICS CO LTD
|
TOSHIBA CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
| Collector-Base Capacitance-Max |
1 pF
|
|
| Collector-Emitter Voltage-Max |
45 V
|
45 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
160
|
160
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.7 V
|
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
TO-92
|
| Package Description |
|
CYLINDRICAL, O-PBCY-T3
|
| Pin Count |
|
3
|
| JEDEC-95 Code |
|
TO-92
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare SBC817-25LT1G with alternatives
Compare TBC337-25 with alternatives