SCT3120ALC11
vs
IPW60R165CP
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
ROHM CO LTD
|
INFINEON TECHNOLOGIES AG
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2016-06-28
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
650 V
|
600 V
|
Drain Current-Max (ID) |
21 A
|
21 A
|
Drain-source On Resistance-Max |
0.156 Ω
|
0.165 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247
|
TO-247
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
265
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
52 A
|
61 A
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN
|
Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON CARBIDE
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-247
|
Pin Count |
|
3
|
Samacsys Manufacturer |
|
Infineon
|
Avalanche Energy Rating (Eas) |
|
522 mJ
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation-Max (Abs) |
|
192 W
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare SCT3120ALC11 with alternatives
Compare IPW60R165CP with alternatives