SCT3120ALC11
vs
STI28N60M2
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ROHM CO LTD
|
STMICROELECTRONICS
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
I2PAK-3
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2016-06-28
|
2017-03-16
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
650 V
|
600 V
|
| Drain Current-Max (ID) |
21 A
|
22 A
|
| Drain-source On Resistance-Max |
0.156 Ω
|
0.15 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-247
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
265
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
52 A
|
88 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON CARBIDE
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
16 Weeks
|
| Samacsys Manufacturer |
|
STMicroelectronics
|
| Avalanche Energy Rating (Eas) |
|
350 mJ
|
| Case Connection |
|
DRAIN
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
170 W
|
|
|
|
Compare SCT3120ALC11 with alternatives
Compare STI28N60M2 with alternatives