SFF450
vs
FML12N50ES
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SOLID STATE DEVICES INC
|
FUJI ELECTRIC CO LTD
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
SMALL OUTLINE, R-PDSO-F4
|
Pin Count |
3
|
4
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
8 mJ
|
460.8 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
12 A
|
12 A
|
Drain-source On Resistance-Max |
0.5 Ω
|
0.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-PDSO-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
180 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
FLAT
|
Terminal Position |
BOTTOM
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Additional Feature |
|
LOW NOISE
|
Pulsed Drain Current-Max (IDM) |
|
48 A
|
|
|
|
Compare SFF450 with alternatives
Compare FML12N50ES with alternatives