SFP2955
vs
FQI6N50TU
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
ROCHESTER ELECTRONICS LLC
Part Package Code
SFM
TO-262AA
Package Description
FLANGE MOUNT, R-PSFM-T3
I2PAK-3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
151 mJ
340 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
500 V
Drain Current-Max (ID)
9.4 A
5.5 A
Drain-source On Resistance-Max
0.3 Ω
1.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-262AA
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
49 W
Pulsed Drain Current-Max (IDM)
38 A
22 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
JESD-609 Code
e3
Moisture Sensitivity Level
NOT APPLICABLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Compare SFP2955 with alternatives
Compare FQI6N50TU with alternatives