SFP9Z34
vs
2N6768
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INTERNATIONAL RECTIFIER CORP
|
| Part Package Code |
TO-220AB
|
|
| Package Description |
TO-220, 3 PIN
|
FLANGE MOUNT, O-MBFM-P2
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
555 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
400 V
|
| Drain Current-Max (ID) |
18 A
|
|
| Drain-source On Resistance-Max |
0.14 Ω
|
0.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-204AA
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
82 W
|
|
| Pulsed Drain Current-Max (IDM) |
72 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
7
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Reference Standard |
|
EUROPEAN SPACE AGENCY
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare SFP9Z34 with alternatives