SI2305DS-T1-GE3
vs
SI2305DS-T1-E3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY SILICONIX
VISHAY SILICONIX
Part Package Code
SOT-23
SOT-23
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
8.8
Average Weight (mg)
11.25
11.25
CO2e (mg)
99
99
Category CO2 Kg
8.8
8.8
EU RoHS Version
RoHS 2 (2011/65/EU)
RoHS 2 (2011/65/EU)
Candidate List Date
2010-12-15
2010-12-15
EFUP
e
e
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free Undeterminable
Conflict Mineral Status Source
CMRT V2.02
CMRT V4.01
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
8 V
8 V
Drain Current-Max (ID)
3.5 A
3.5 A
Drain-source On Resistance-Max
0.052 Ω
0.052 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-236AB
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
12 A
12 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2