SI3456DV-T1
vs
SI3456DV
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
FAIRCHILD SEMICONDUCTOR CORP
|
Reach Compliance Code |
unknown
|
unknown
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
5.1 A
|
5.1 A
|
Drain-source On Resistance-Max |
0.045 Ω
|
0.045 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G
|
R-PDSO-G6
|
Number of Elements |
1
|
1
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
20 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Rohs Code |
|
Yes
|
Part Package Code |
|
SOT
|
Package Description |
|
SUPERSOT-6
|
Pin Count |
|
6
|
ECCN Code |
|
EAR99
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Terminals |
|
6
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
1.6 W
|
Terminal Finish |
|
MATTE TIN
|
Transistor Application |
|
SWITCHING
|
|
|
|
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