SI4435DYPBF vs FDS6975 feature comparison

SI4435DYPBF Infineon Technologies AG

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FDS6975 onsemi

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G8 SO-8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon onsemi
Additional Feature ULTRA LOW RESISTANCE LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 8 A 6 A
Drain-source On Resistance-Max 0.02 Ω 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2 W
Pulsed Drain Current-Max (IDM) 50 A 20 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pbfree Code Yes
Part Package Code SOIC-8
Manufacturer Package Code 751EB
Factory Lead Time 11 Weeks
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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