SI4435DYPBF vs TPCA8020-H feature comparison

SI4435DYPBF Infineon Technologies AG

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TPCA8020-H Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 40 V
Drain Current-Max (ID) 8 A 7.5 A
Drain-source On Resistance-Max 0.02 Ω 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-F8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2.8 W
Pulsed Drain Current-Max (IDM) 50 A 30 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pin Count 8
Avalanche Energy Rating (Eas) 26 mJ

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