SI4946EY
vs
DMNH6022SSD-13
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
DIODES INC
|
Part Package Code |
SOT
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SOP-8
|
Pin Count |
8
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
7.2 mJ
|
24 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
4.5 A
|
7.1 A
|
Drain-source On Resistance-Max |
0.055 Ω
|
0.03 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
30 A
|
45 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
1
|
Factory Lead Time |
|
8 Weeks
|
Additional Feature |
|
HIGH RELIABILITY
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
AEC-Q101
|
Terminal Finish |
|
Matte Tin (Sn)
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare SI4946EY with alternatives
Compare DMNH6022SSD-13 with alternatives