SI6562DQ-E3
vs
SI6562CDQ-T1-GE3
feature comparison
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Active
|
| Ihs Manufacturer |
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
|
HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8
|
| Reach Compliance Code |
|
compliant
|
| Samacsys Manufacturer |
|
Vishay
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
20 V
|
| Drain Current-Max (ID) |
|
4.2 A
|
| Drain-source On Resistance-Max |
|
0.022 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-PDSO-G8
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
8
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
N-CHANNEL AND P-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
1.7 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
1
|
|
|
|
Compare SI6562CDQ-T1-GE3 with alternatives