SI6562DQ-E3 vs SI6562DQ feature comparison

SI6562DQ-E3

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SI6562DQ Temic Semiconductors

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Part Life Cycle Code Transferred
Ihs Manufacturer TEMIC SEMICONDUCTORS
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Base Number Matches 1