SI6562DQ-E3
vs
SI6562DQ
feature comparison
Part Life Cycle Code |
|
Transferred
|
Ihs Manufacturer |
|
TEMIC SEMICONDUCTORS
|
Reach Compliance Code |
|
unknown
|
Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
20 V
|
Drain Current-Max (ID) |
|
4.5 A
|
Drain-source On Resistance-Max |
|
0.03 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
|
R-PDSO-G
|
Number of Elements |
|
2
|
Operating Mode |
|
ENHANCEMENT MODE
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Polarity/Channel Type |
|
N-CHANNEL AND P-CHANNEL
|
Qualification Status |
|
Not Qualified
|
Surface Mount |
|
YES
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Transistor Element Material |
|
SILICON
|
Base Number Matches |
|
1
|
|
|
|