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SI6562DQ-T1-E3 vs SI6562DQ feature comparison

SI6562DQ-T1-E3 Vishay Siliconix

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SI6562DQ Temic Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY SILICONIX TEMIC SEMICONDUCTORS
Part Package Code TSSOP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (Abs) (ID) 4.5 A
Drain Current-Max (ID) 0.0045 A 4.5 A
Drain-source On Resistance-Max 0.03 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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