SI7431DP-T1-GE3
vs
IRFE9230
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
SEMELAB LTD
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
|
CHIP CARRIER, R-CQCC-N15
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
9 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
|
Additional Feature |
ULTRA-LOW RESISTANCE
|
AVALANCHE ENERGY RATING
|
Avalanche Energy Rating (Eas) |
45 mJ
|
75 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
2.2 A
|
3.6 A
|
Drain-source On Resistance-Max |
0.174 Ω
|
0.825 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XDSO-C5
|
R-CQCC-N15
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
15
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
5.4 W
|
|
Pulsed Drain Current-Max (IDM) |
30 A
|
14.4 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
C BEND
|
NO LEAD
|
Terminal Position |
DUAL
|
QUAD
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
4
|
Pbfree Code |
|
No
|
|
|
|
Compare SI7431DP-T1-GE3 with alternatives
Compare IRFE9230 with alternatives