SI7456DP-T1
vs
SI7456DP-T1-E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY SILICONIX
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
5.7 A
|
5.7 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
5.2 W
|
1.9 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - annealed
|
| Base Number Matches |
3
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-F5
|
| Pin Count |
|
8
|
| HTS Code |
|
8541.29.00.95
|
| Samacsys Manufacturer |
|
Vishay
|
| Additional Feature |
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
45 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
100 V
|
| Drain-source On Resistance-Max |
|
0.025 Ω
|
| JESD-30 Code |
|
R-PDSO-F8
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
8
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation Ambient-Max |
|
1.9 W
|
| Pulsed Drain Current-Max (IDM) |
|
40 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
140 ns
|
| Turn-on Time-Max (ton) |
|
60 ns
|
|
|
|
Compare SI7456DP-T1 with alternatives
Compare SI7456DP-T1-E3 with alternatives