SI7788DP-T1-GE3
vs
SI7856ADP-T1-E3
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
Part Package Code |
SOT
|
SOT
|
Package Description |
SMALL OUTLINE, R-XDSO-C5
|
SMALL OUTLINE, R-XDSO-C5
|
Pin Count |
8
|
8
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
80 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
29.5 A
|
15 A
|
Drain-source On Resistance-Max |
0.0031 Ω
|
0.0037 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XDSO-C5
|
R-XDSO-C5
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
69 W
|
5.4 W
|
Pulsed Drain Current-Max (IDM) |
70 A
|
60 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
|
|
|
Compare SI7788DP-T1-GE3 with alternatives
Compare SI7856ADP-T1-E3 with alternatives