SIA447DJ-T1-GE3
vs
SSM6J505NU,LF
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
TOSHIBA CORP
|
| Package Description |
SMALL OUTLINE, S-PDSO-N3
|
SMALL OUTLINE, S-PDSO-N6
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
Vishay
|
Toshiba
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
12 V
|
12 V
|
| Drain Current-Max (ID) |
12 A
|
12 A
|
| Drain-source On Resistance-Max |
0.0135 Ω
|
0.016 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
585 pF
|
|
| JESD-30 Code |
S-PDSO-N3
|
S-PDSO-N6
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
3.5 W
|
|
| Power Dissipation-Max (Abs) |
19 W
|
|
| Pulsed Drain Current-Max (IDM) |
50 A
|
30 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
170 ns
|
|
| Turn-on Time-Max (ton) |
120 ns
|
|
| Base Number Matches |
1
|
2
|
| Factory Lead Time |
|
53 Weeks, 1 Day
|
|
|
|