SIHB20N50E-GE3 vs SPB21N50C3 feature comparison

SIHB20N50E-GE3 Vishay Intertechnologies

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SPB21N50C3 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 21 Weeks 15 Weeks
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 204 mJ 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 19 A 21 A
Drain-source On Resistance-Max 0.184 Ω 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 179 W 208 W
Pulsed Drain Current-Max (IDM) 42 A 63 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 146 ns
Turn-on Time-Max (ton) 88 ns
Base Number Matches 1 3
Pbfree Code Yes
Part Package Code D2PAK
Pin Count 4
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare SIHB20N50E-GE3 with alternatives

Compare SPB21N50C3 with alternatives