SIHB28N60EF-GE3 vs IPW60R125C6FKSA1 feature comparison

SIHB28N60EF-GE3 Vishay Intertechnologies

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IPW60R125C6FKSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 691 mJ 636 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 28 A 30 A
Drain-source On Resistance-Max 0.123 Ω 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-263AB TO-247
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 75 A 89 A
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 201 ns
Turn-on Time-Max (ton) 128 ns
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-247
Pin Count 3
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare SIHB28N60EF-GE3 with alternatives

Compare IPW60R125C6FKSA1 with alternatives