SIHF30N60E-GE3 vs IPA60R125C6XKSA1 feature comparison

SIHF30N60E-GE3 Vishay Intertechnologies

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IPA60R125C6XKSA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks 4 Weeks
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 690 mJ 636 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 29 A 30 A
Drain-source On Resistance-Max 0.125 Ω 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 37 W
Pulsed Drain Current-Max (IDM) 65 A 89 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-220AB
Pin Count 3
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare SIHF30N60E-GE3 with alternatives

Compare IPA60R125C6XKSA1 with alternatives