SIHFR1N60A-GE3
vs
SIHFR1N60ATR-GE3
feature comparison
| Part Life Cycle Code |
|
Active
|
| Ihs Manufacturer |
|
VISHAY SILICONIX
|
| Package Description |
|
,
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| Configuration |
|
SINGLE
|
| Drain Current-Max (ID) |
|
1.4 A
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
36 W
|
| Surface Mount |
|
YES
|
| Base Number Matches |
|
1
|
|
|
|
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