SIHFR9014TR-GE3
vs
IRFR9014
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY SILICONIX
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
140 mJ
140 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
5.1 A
5.1 A
Drain-source On Resistance-Max
0.5 Ω
0.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-252
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
20 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
5
Pbfree Code
No
Part Package Code
TO-252
Package Description
DPAK-3
Pin Count
3
JESD-609 Code
e0
Operating Temperature-Min
-55 °C
Terminal Finish
TIN LEAD
Compare SIHFR9014TR-GE3 with alternatives
Compare IRFR9014 with alternatives