SIHLR120-GE3 vs IRLR120 feature comparison

SIHLR120-GE3 Vishay Intertechnologies

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IRLR120 Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Additional Feature AVALANCHE RATED LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 7.7 A 7.9 A
Drain-source On Resistance-Max 0.27 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 42 W 42 W
Pulsed Drain Current-Max (IDM) 31 A 32 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 42 W
Turn-off Time-Max (toff) 75 ns
Turn-on Time-Max (ton) 42 ns

Compare SIHLR120-GE3 with alternatives

Compare IRLR120 with alternatives