SIHP14N60E-GE3
vs
STB22N60DM6
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
STMICROELECTRONICS
|
| Package Description |
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
21 Weeks
|
14 Weeks
|
| Date Of Intro |
2016-05-10
|
|
| Samacsys Manufacturer |
Vishay
|
STMicroelectronics
|
| Avalanche Energy Rating (Eas) |
136 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
600 V
|
|
| Drain Current-Max (ID) |
13 A
|
|
| Drain-source On Resistance-Max |
0.309 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Pulsed Drain Current-Max (IDM) |
32 A
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare SIHP14N60E-GE3 with alternatives
Compare STB22N60DM6 with alternatives