SIHP8N50D-GE3
vs
IRF840BPBF
feature comparison
Part Life Cycle Code |
End Of Life
|
End Of Life
|
Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY SILICONIX
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Vishay
|
Avalanche Energy Rating (Eas) |
29 mJ
|
56 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
8.7 A
|
8.7 A
|
Drain-source On Resistance-Max |
0.85 Ω
|
0.85 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
156 W
|
156 W
|
Pulsed Drain Current-Max (IDM) |
18 A
|
18 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Feedback Cap-Max (Crss) |
|
8 pF
|
JESD-609 Code |
|
e3
|
Operating Temperature-Min |
|
-55 °C
|
Terminal Finish |
|
MATTE TIN OVER NICKEL
|
Turn-off Time-Max (toff) |
|
56 ns
|
Turn-on Time-Max (ton) |
|
58 ns
|
|
|
|
Compare SIHP8N50D-GE3 with alternatives
Compare IRF840BPBF with alternatives