SIR872ADP-T1-GE3 vs IRHNA67164SCS feature comparison

SIR872ADP-T1-GE3 Vishay Intertechnologies

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IRHNA67164SCS Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 CHIP CARRIER, R-CBCC-N3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 44 Weeks
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 45 mJ 283 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V 150 V
Drain Current-Max (ID) 53.7 A 56 A
Drain-source On Resistance-Max 0.018 Ω 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5 R-CBCC-N3
Number of Elements 1 1
Number of Terminals 5 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A 224 A
Surface Mount YES YES
Terminal Form C BEND NO LEAD
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Reference Standard RH - 100K Rad(Si)