SIR880DP-T1-GE3 vs BSC093N04LSGATMA1 feature comparison

SIR880DP-T1-GE3 Vishay Intertechnologies

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BSC093N04LSGATMA1 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC INFINEON TECHNOLOGIES AG
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Infineon
Avalanche Energy Rating (Eas) 61 mJ 10 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 40 V
Drain Current-Max (ID) 60 A 13 A
Drain-source On Resistance-Max 0.0067 Ω 0.0093 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5 R-PDSO-F8
Number of Elements 1 1
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A 196 A
Surface Mount YES YES
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code No
Part Package Code SON
Pin Count 8
Factory Lead Time 16 Weeks, 5 Days
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare SIR880DP-T1-GE3 with alternatives

Compare BSC093N04LSGATMA1 with alternatives