SIS488DN-T1-GE3
vs
RJK0454DPB-00-J5
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
RENESAS ELECTRONICS CORP
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
|
SMALL OUTLINE, R-PSSO-G4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
38 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
20 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
40 A
|
40 A
|
Drain-source On Resistance-Max |
0.0055 Ω
|
0.0049 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-C5
|
R-PSSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
100 A
|
160 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
C BEND
|
GULL WING
|
Terminal Position |
DUAL
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SC-100
|
Pin Count |
|
4
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
55 W
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare SIS488DN-T1-GE3 with alternatives
Compare RJK0454DPB-00-J5 with alternatives