SISA04DN-T1-GE3
vs
SIRA04DP-T1-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
HALEGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
|
HALEGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Avalanche Energy Rating (Eas) |
20 mJ
|
20 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
40 A
|
40 A
|
| Drain-source On Resistance-Max |
0.00215 Ω
|
0.00215 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-C5
|
R-PDSO-C5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
52 W
|
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
80 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
8 Weeks
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SISA04DN-T1-GE3 with alternatives
Compare SIRA04DP-T1-GE3 with alternatives