SISA18ADN-T1-GE3
vs
SISA34DN-T1-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
18 Weeks, 3 Days
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Avalanche Energy Rating (Eas) |
5 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
38.3 A
|
|
| Drain-source On Resistance-Max |
0.0075 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
S-PDSO-C5
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
5
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
SQUARE
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
19.8 W
|
|
| Pulsed Drain Current-Max (IDM) |
70 A
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
,
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|