SMBJ100A vs SMBJ100/TR13 feature comparison

SMBJ100A International Semiconductor Inc

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SMBJ100/TR13 Microsemi Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 123 V 136 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V 123.5 V
Clamping Voltage-Max 162 V 179 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code No
Rohs Code No
Part Package Code DO-214AA
Package Description R-PDSO-J2
Pin Count 2
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1

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