SMBJ18A vs SMBJ18AT feature comparison

SMBJ18A Taiwan Semiconductor

Buy Now Datasheet

SMBJ18AT Lite-On Semiconductor Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD LITE-ON SEMICONDUCTOR CORP
Package Description SMB, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 22.1 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Breakdown Voltage-Nom 21.05 V
Clamping Voltage-Max 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 1.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 18 V 18 V
Reverse Current-Max 1 µA
Reverse Test Voltage 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 14 2
Reference Standard AEC-Q101

Compare SMBJ18A with alternatives

Compare SMBJ18AT with alternatives